n-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3332 issue 2 page 1 of 3 irf240 ? low r ds(on) mosfet transistor in a hermetic metal package ? designed for switching, power supply, motor control and amplifier applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) vds drain ? source voltage 200v v gs gate ? source voltage 20v i d continuous drain current t c = 25c 18a i d continuous drain current t c = 100c 11a i dm pulsed drain current (1) 72a p d total power dissipation at t c = 25c 125w derate above 25c 1.0w/c e as single pulse avalanche energy (2) 12.5mj dv/dt peak diode recovery (3) 5v/ns t j junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 1.0 c/w internal package inductance symbols parameters min. typ. max. units l d internal drain inductance 5 l s internal source inductance 13 nh notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature (2) @v dd = 50v, l 2.1mh, peak i l = 18a, starting t j = 25c (3) @ i sd 18a, di/dt 160a/s, v dd bv dss , t j 150c, suggested r g = 9.1 (4) pulse width 300us, 2%
n-channel power moset irf240 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3332 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units bv dss drain-source breakdown voltage v gs = 0 i d = 1.0ma 200 v j t vdss b ? ? temperature coefficent of breakdown voltage reference to 25c i d = 1.0ma 0.29 v/c v gs = 10v i d = 11a (4) 0.18 r ds(on) static drain-source on-state resistance v gs = 10v i d = 18a (4) 0.21 v gs(th) gate threshold voltage v ds = v gs i d = 250 a 2 4 v g fs forward transconductance v ds 15v i ds = 11a (4) 6.1 s( ) v gs = 0 v ds = 0.8bv dss 25 i dss zero gate voltage drain current t j = 125c 250 a i gss forward gate-source leakage v gs = 20v 100 i gss reverse gate-source leakage v gs = -20v -100 na dynamic characteristics c iss input capacitance v gs = 0 1300 c oss output capacitance v ds = 25v 400 c rss reverse transfer capacitance f = 1.0mhz 130 pf q g total gate charge v gs = 10v 32 60 q gs gate-source charge i d = 18a 2.2 10.6 q gd gate-drain charge v ds = 0.5bv dss 14 38 nc t d(on) turn-on delay time 20 t r rise time 152 t d(off) turn-off delay time 58 t f fall time v dd = 100v i d = 18a r g = 9.1 67 ns source-drain diode characteristics i s continuous source current 18 i sm pulse source current (1) 72 a i s = 18a t j = 25c v sd diode forward voltage v gs = 0 (4) 1.5 v t rr reverse recovery time i s = 18a t j = 25c 500 ns q rr reverse recovery charge v dd 50v di/dt = 100a/ s (4) 5.3 c
n-channel power moset irf240 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3332 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204ae ) pin 1 - gate pin 2 - source case - drain 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ( 0 . 4 2 0 ) 1 2 4 . 0 9 ( 0 . 1 6 1 ) 3 . 8 4 ( 0 . 1 5 1 ) d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 1 0 ) 6 . 9 9 ( 0 . 2 7 5 ) 1 2 . 0 7 ( 0 . 4 7 5 ) 1 1 . 3 0 ( 0 . 4 4 5 ) 1 . 7 8 ( 0 . 0 7 0 ) 1 . 5 2 ( 0 . 0 6 0 ) 1 . 5 7 ( 0 . 0 6 2 ) 1 . 4 7 ( 0 . 0 5 8 ) d i a . 2 p l c s .
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